New SiC MOSFETs offer lower switching loss over conventional packages

15-10-2019 | ROHM Semiconductor | Power

ROHM offers six new trench gate structure SiC MOSFETs (650V/1200V), the SCT3xxx xR series, which are ideal for server power supplies, solar power inverters, UPS systems, and EV charging stations requiring high efficiency.

The series uses a four-pin package (TO-247-4L) that maximizes switching performance, which makes it possible to decrease switching loss by up to 35% over conventional three-pin package types. This adds to lower power consumption in a diversity of applications.

The company also offers solutions that promote application evaluation, including a SiC MOSFET evaluation board, P02SCT3040KR-EVK-001, furnished with gate driver ICs (BM6101FV-C) as well as with multiple power supply ICs and discrete components optimised for SiC device drive.