MOSFET increases efficiency and power density in small footprint

24-09-2019 | Vishay | Power

Vishay Intertechnology has launched a new 60V TrenchFET Gen IV n-channel power MOSFET that is claimed to be the industry’s first optimised for standard gate drives to achieve maximum on-resistance down to 4mOhm at 10V in the thermally enhanced 3.3mm x 3.3mm PowerPAK 1212-8S package. Created to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN provides a low gate charge of 22.5nC as well as low output charge (QOSS).

Unlike logic-level 60V devices, the typical VGS(th) and Miller plateau voltage of the device are increased for circuits with gate drive voltages over 6V, where the device provides optimised dynamic characteristics that enable short dead-times and stop shoot-through in synchronous rectifier applications. The device’s industry-low on-resistance is claimed to be 4.8% lower than the next best product — and rivals the leading logic-level device — while its QOSS of 34.2nC gives the best in class QOSS times on-resistance, a critical figure of merit (FOM) for MOSFETs employed in power conversion designs employing ZVS or switch-tank topology. To deliver higher power density, the device uses 65% less PCB space than similar solutions in 6mm x 5mm packages.

The device's specifications are fine-tuned to minimise conduction and switching losses at the same time. The result is improved efficiency that can be achieved in multiple power management system building blocks, including synchronous rectification in AC/DC and DC-DC topologies; primary-side switching in DC-DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies; motor drive control and circuit protection in power tools and industrial equipment; and battery protection and charging in battery management modules.

The MOSFET is 100% RG and UIS-tested, RoHS-compliant, and halogen-free.

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