MOSFET designed for standard gate drives features low gate charge

18-09-2019 | Vishay | Power

Vishay Intertechnology offers a new 60V TrenchFET Gen IV n-channel power MOSFET that is claimed to be the industry’s first optimised for standard gate drives to achieve maximum on-resistance down to 4mOhm at 10V in the thermally enhanced 3.3mm x 3.3mm PowerPAK 1212-8S package. Created to improve efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN offers a low gate charge of 22.5nC along with low output charge (QOSS).

Unlike logic-level 60V devices, the typical VGS(th) and Miller plateau voltage of the device are improved for circuits with gate drive voltages above 6V, where the device gives optimised dynamic characteristics that allow short dead-times and stop shoot-through in synchronous rectifier applications. The device's industry-low on-resistance is 4.8% lower than the next best product — and rivals the leading logic-level device — while its QOSS of 34.2nC results in the best in class QOSS times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion designs employing ZVS or switch-tank topology. To deliver higher power density, the device uses 65% less PCB space than similar solutions in 6mm x 5mm packages.

The device's specifications are fine-tuned to lessen conduction and switching losses simultaneously. The result is improved efficiency that can be obtained in multiple power management system building blocks, as well as synchronous rectification in AC/DC and DC-DC topologies; primary-side switching in DC-DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in server and telecom power supplies; circuit protection and motor drive control in power tools and industrial equipment; and battery protection and charging in battery management modules.

The MOSFET is 100% RG and UIS-tested, RoHS-compliant, and halogen-free.

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