MOSFET and GaN FET driver for high-frequency applications

The Texas Instruments LMG1210 200V half-bridge MOSFET and GaN FET driver is part of their GaN power portfolio family. The device facilitates higher efficiency, increased power density, and lower overall system size over conventional silicon-based alternatives, and are optimised especially for speed-critical power-conversion applications.

The device is a 50MHz half-bridge driver intended to operate with enhancement-mode GaN FETs up to 200V. Engineered for maximum performance and highly efficient operation, the device provides an ultra-fast propagation delay of 10ns, which is faster than conventional silicon half-bridge drivers. The device also offers a low switch-node capacitance of 1pF with user-adjustable dead time control, which helps enhance efficiency by enabling designers to optimise dead-time within their system.

The device provides 3.4ns high-side–to–low-side delay matching, a minimum pulse width of 4ns, and an internal LDO that ensures a gate-drive voltage of 5V regardless of supply voltage. The driver also includes a common-mode transient immunity (CMTI) of more than 300V/ns — one of the industry’s highest — which facilitates high system-noise immunity.

The company’s driver is perfect for a wide range of applications, including high-speed DC-DC converters, motor control, Class-D audio amplifiers, Class-E wireless charging, RF envelope tracking, and other power-conversion applications.