High-performance SiC FET device ideal for EV charging and much more

28-06-2019 | UnitedSiC | Power

UnitedSiC has expanded its UF3C FAST series product range by offering a further 1200V high-performance SiC FET device in a TO-247-4L four-leaded Kelvin Sense discrete package option. The UF3C120150K4S gives a typical on-resistance (RDS(on)) of 150mOhm, bringing the total number of four-leaded FAST Series devices up to six and increasing the on-resistance range of the entire series from 30mOhm up to 150mOhm.


With a maximum operating temperature of 175C, the device provides superior reverse recovery, low gate charge and low intrinsic capacitance. The ESD protected, HBM class 2 TO-247-4L package provides faster switching and far cleaner gate waveforms in comparison to a standard three-leaded TO-247. The four-pin Kelvin package dodges gate ringing and false triggering which would ordinarily need switching speeds to be restricted to manage the large common source inductance of three-leaded packages. This device is excellent for EV charging, switch mode power supplies, photovoltaic inverters, PFC modules, motor drives and induction heating.


Unique to the company’s entire UJ3C and UF3C SiC FET portfolio is its true 'drop-in replacement' functionality. Designers can enhance system performance, with no need to modify gate drive voltage, by substituting their existing Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices with the UnitedSiC FETs.

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