Half-bridge MOSFET and GaN FET drivers for high-efficiency applications

Texas Instruments LMG1210 200V Half-Bridge MOSFET and GaN FET Drivers are intended for ultra-high frequency and high-efficiency applications. The device is excellent for applications that offer adjustable deadtime ability, very small propagation delay, and 3.4ns high-side low-side matching to optimise system efficiency. The drivers give an internal LDO which ensures a gate-drive voltage of 5V regardless of the supply voltage.

The device enables the user to select the optimal bootstrap diode to charge the high-side bootstrap capacitor allowing best performance in a diversity of applications. When the low side is off, an internal switch turns the bootstrap diode off stopping the high-side bootstrap from overcharging and reducing the reverse recovery charge. Further parasitic capacitance across the GaN FET is reduced to less than 1pF, thereby decreasing additional switching losses. The device offers two control input modes, IIM and PWM mode. The IIM enables each of the outputs to be independently controlled by a dedicated input. The PWM mode offers two complementary output signals to be generated from a single input, ending in an adjustable dead time from 0 to 20ns for each edge. The device works over a broad temperature range from –40C to 125C and is provided in a low-inductance WQFN package.

Typical high-speed DC-DC converters, RF envelope tracking, Class-D audio amplifiers, Class-E wireless charging, and High-precision motor control.