Seven new SiC FETs added to product portfolio

UnitedSiC has added seven new TO220-3L and D2PAK-3L device/package combinations to its UJ3C (general purpose) and UF3C (hard switched) series of 650V SiC FETs.

These new devices offer new levels of high-voltage power performance in the fast-growing data centre server, 5G base station, and electric vehicle markets, where they will be employed in power supplies, telecom rectifiers, and onboard chargers respectively. The new devices will interest designers who prefer a three-lead, TO220 or D2PAK package option, yet are still looking to improve power performance in power-factor correction circuits, LLC resonant converters, and phase-shifted full-bridge converters.

Unique to the company’s UJ3C and UF3C FET portfolio is its true 'drop-in replacement' functionality. Designers can significantly improve system performance, with no need to change gate drive voltage, by substituting their existing Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices with the company's FETs.

Both series of SiC FETs are based on the company's unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to create a normally-off SiC FET device that has standard gate-drive characteristics. Consequently, existing systems upgraded with these 'drop-in replacement' FETs can expect a performance boost with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection. In the case of new designs, the FETs offer improved switching frequencies to gain large system gains in both efficiency and decrease in size, and expense of passive components, such as magnetics and capacitors.

The three-leaded, industry-standard TO220-3L package provides enhanced thermal characteristics made possible by the company's sintered-silver packaging technology. New products offered in this package comprise the UJ3C device with RDS(on) values of 30 and 80mOhms, and the UF3C device with an RDS(on) spec of 40mOhms.