Small MOSFET ideal for automotive headlight applications

21-02-2019 | Toshiba | Power

Toshiba Electronics has released a dual MOSFET with high levels of ESD protection. The new SSM6N813R is designed for use in rugged automotive applications, as well as for use as a driver IC for headlight LEDs, which need a high withstand voltage and a small footprint.

A maximum drain-source voltage (VDSS) of 100V assures that the device is ideal for headlight applications needing multiple LEDs, an ability supported by the device’s high levels ESD immunity. Fabricated using the latest process, the device has a maximum power dissipation of 1.5W and provides efficient operation through low on-resistance (RDS(ON)) of just 112mOhm. The devices can support drain currents (ID) up to 3.5A.

The dual MOSFETs are packaged in a tiny TSOP6F package that measures only 2.9mm x 2.8mm x 0.8mm, the same size as a SOT23 package and provides a footprint that is 70% smaller than that of an SOP8 package.

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