HEMTs allow efficient high-speed switching in compact system designs

28-01-2019 | Mouser Electronics | Semiconductors

The CoolGaN gallium nitride (GaN) HEMTs from Infineon Technologies is now in stock at Mouser. Providing high efficiency and power density, the CoolGaN HEMTs enable high-speed switching in semiconductor power supplies. Ideal for both hard and soft-switching topologies, the devices are excellent for applications such as wireless charging, SMPS, telecommunications, hyperscale data centres, and servers.

The HEMTs provide outstanding quality when compared with silicon switching devices. The devices provide ten times’ lower output charge and gate charge in comparison to silicon transistors, as well as ten times’ higher breakdown field and twice the mobility. Optimised for turn-on and turn-off, the devices offer new topologies and current modulation to produce innovative switching solutions. The HEMTs’ surface-mount packaging assures that switching abilities are fully accessible, while the devices’ compact design allow their use in a mixture of limited-space applications.

The company’s CoolGaN Gallium Nitride HEMTs are supported by the EVAL_1EDF_G1_HB_GAN and EVAL_2500W_PFC_G evaluation platforms. The EVAL_1EDF_G1_HB_GAN board features a CoolGaN 600 V HEMT and an Infineon GaN EiceDRIVER gate driver IC to allow engineers to evaluate high-frequency GaN abilities in the universal half-bridge topology for converter and inverter applications. The EVAL_2500W_PFC_G board comprises CoolGaN 600V e-mode HEMTs, a CoolMOS C7 Gold superjunction MOSFET, and EiceDRIVER gate driver ICs to deliver a 2.5kW full-bridge PFC evaluation tool that boosts system efficiency above 99% in energy-critical applications like SMPS and telecom rectifiers.

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