SiC Schottky diodes uses new technology

Available now from RS Components, SiC Schottky Diodes use a completely new technology that offers superior switching performance and higher reliability to silicon. No reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. The device's maximum junction temperature is 175C, offering a high surge current capacity, positive temperature coefficient. Typical applications include PFC, industrial power, solar, EV charger, UPS, and welding.