High power IFF transistor ideal for L-band avionics

Integra Technologies is offering an IFF avionics transistor providing 120W peak output power using GaN/SiC technology. Created for IFF avionic applications, the IGN1011L120 is a high power GaN transistor, designated for use under Class AB operation. This transistor operates at 1.03-1.09GHz, and supplies a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. Constructed via chip and wire technology, using gold metallisation, the unit is housed in a metal-based package and sealed with a ceramic-epoxy lid. This 100% high power RF tested transistor for new designs has 17dB of gain and a drain efficiency of 75% at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4% duty cycle.