GaN/SiC RF power modules help simplify radar amplifier design

Integra Technologies has announced a new line of over a dozen standardised RF power modules. Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies, or 'pallets', these new, ultra-efficient RF Power Modules are being produced to provide a new level of integration which results in powerful but simple, higher-level building blocks for creating SWaP-C optimised high power amplifiers found in pulsed and CW radar systems. Built-in functions can comprise RF matching, output noise suppression, temperature compensation, gate-pulsing and sequencing (GPS), and VSWR protection. The company's RF power modules are offered in a variety of RF bands, and future standard and semi-custom solutions will be developed around their commitment to push their advanced gallium nitride on silicon carbide 50Ohm RF Power Transistor technology up to X-band territories. Standard RF power modules currently offer output power up to 2400W, and efficiencies up to 70%. Unique footprints and packaging approaches are available.