New building to expand the production capacity of SiC power devices

19-04-2018 | ROHM Semiconductor | Design Applications

ROHM has recently announced plans to construct a new building at its Apollo plant in Chikugo, Japan, to expand production capacity to meet the rising demand for SiC power devices. In addition to mass producing SiC power devices (SiC SBDs and MOSFETs) since 2010, the company continues to develop industry-leading technologies. At the same time, they have established a vertically integrated production system across the entire group, and have been working to increase the production efficiency by increasing wafer size and utilising the latest equipment.

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