DC EV charging solutions meets the demand for quicker battery charging

Infineon DC EV Charging Solutions, offered by Mouser, are a portfolio of highly efficient semiconductors that address the increasing demand for quicker electric vehicle (EV) battery charging. DC charging stations are growing into a more winning choice than standard AC EV because they offer faster charging times. A 120kW DC charging pile can charge almost 80% of a battery in 30 minutes and as fast charging technology improves, charging time will continue to drop. However, designing a successful DC EV charging power supply can be challenging. Designs must enhance output power to shorten charging time, boost power density within a set of charging station dimensions, increase efficiency by boosting loads, and decrease power dissipation. The company can offer EV charging solutions that cover kilowatt to megawatt power ranges from high-quality power semiconductors, microcontrollers, gate driver ICs and security and safety authentication solutions. Some featured products from the Infineon solutions that Mouser provide include: Infineon CoolSiC MOSFET Modules in EasyDUAL 1B semiconductor solutions are the next step towards an energy-smart world. Comparing them to traditional Si-based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include the lowest gate charge and device capacitances levels available in 1200V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics. The Infineon XMC4000 32-Bit Industrial MCUs combine a leading-edge peripheral set with an industry-standard ARM Cortex-M4 core. They feature the company's powerful peripheral set configurable to specific application requirement device is an excellent choice for today's industrial control solutions. Infineon Half-Bridge Gate Driver ICs are based on level-shifter SOI (Silicon on Insulator) technology. This technology combines a low-ohmic ultrafast bootstrap diode and sustains higher efficiency and smaller form factors of applications. Infineon 6ED Full-Bridge Driver ICs control power devices like MOS-transistors or IGBTs in three-phase systems. Based on the used SOI-technology, there is an outstanding ruggedness on transient voltages. No parasitic thyristor structures are present in the devices. Consequently, no parasitic latch-up occurs at all temperatures and voltage conditions. Infineon 1200V CoolSiC Schottky Diodes are provided with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.