Transistor helps speed RF power design with LDMOS technology

NXP Semiconductors’ new MRFX1K80H LDMOS transistor is now available from Mouser. The device is part of the MRFX series of RF MOSFET transistors that incorporate a new LDMOS technology. The LDMOS technology found in the device helps increase the output power in wideband applications while maintaining appropriate output impedance. The LDMOS transistor is designed to deliver 1800W of a continuous wave at 65V for RF applications from 1.8MHz to 470MHz with the ability to handle a voltage standing wave ratio (VSWR) of 65-to-1 at all phase angles. The device offers impedance matching to 50Ohms, helping to reduce the overall development time. Designed for an extended power range from 30V to 65V, the device features a high breakdown voltage that provides enhanced reliability and higher efficiency. The high voltage lowers the current in the system, limiting the stresses on DC power supplies thereby reducing magnetic radiation. The higher output power also helps decrease the number of transistors to combine and simplify the power amplifier complexity and reduce the overall size. The device is suitable for linear applications with appropriate biasing and offers integrated ESD protection for improved Class C operation. Target applications for the device include ISM applications as well as broadcast, aerospace, and mobile radio equipment.