SiC Power MOSFETs enable a lighter compact system

Microsemi APT40SM120 SiC Power MOSFETs, available from Mouser, offer increased performance in high-voltage applications in comparison to silicon MOSFET/IGBT solutions. The MOSFETs enable a lighter, more compact system making them highly efficient. The MOSFETs are simple to drive and easy to parallel. The devices eliminate the need for an external free wheeling diode while providing improved thermal capabilities and lower switching losses. Features include superior avalanche ruggedness and fast switching speed due to low internal gate resistance (ESR). The device also provides stable operation at the high junction temperature of +175C. The MOSFETs have a drain current of 32A or 36A, 1200V breakdown voltage, and a maximum 100ohm on-state resistance. Applications include H/EV powertrain and EV charger, induction heating and welding, smart grid transmission and distribution, power supply and distribution, as well as PV inverter, converter and industrial motor drives.