GaN power stage lower power losses compared to silicon-based designs

Mouser now offers the LMG5200 GaN power stage from Texas Instruments. The LMG5200 device delivers 25% lower power losses compared to silicon-based designs, enabling single-stage conversion and providing increased power density and efficiency in space-constrained, high-frequency industrial, telecom, and motor control applications. The device is an 80V, 10A integrated GaN FET power stage that consists of a high-frequency driver and two 15milliohm GaN FETs in a half-bridge configuration. The device significantly reduces EMI while increasing power-stage efficiency by minimizing packaging parasitic inductances in the critical gate-drive loop. The device features advanced multichip packaging technology and is optimized to support power-conversion topologies with frequencies up to 5 MHz. The device’s TTL-compatible inputs can withstand input voltages up to 12V regardless of the VCC voltage. This allows the inputs to be directly connected to the outputs of an analog PWM controller with up to 12V power supply, eliminating the need for a buffer stage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.