New die version DDR3 and DDR3L SDRAMs provides new memory chip source

15-06-2017 | Alliance Memory | Semiconductors

To address the memory market's shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs, Alliance Memory has announced a new die revision (B die) for its 2Gb and 4Gb devices in the 96-ball FBGA package. "Market demand for DDR3 and DDR3L SDRAMs is extremely high due to their increased functionality and speed, but their availability is becoming more and more limited as demand exceeds supply and suppliers move capacity to Flash and other products," said TJ Mueller, vice president of Marketing at Alliance Memory. "With the introduction of a new B die version, we now have two sources for our 2Gb and 4Gb parts' silicon. This means our customers can be more confident than ever in our ability to deliver these devices despite shortages and price increases in the memory market." The DDR architecture of the 2Gb and 4Gb DDR3 and DDR3L SDRAMs allows them to achieve extremely fast transfer rates of 1600Mbps and clock rates of 800MHz. With minimal die shrinks, the devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in newer-generation microprocessors for networking, industrial, medical, telecom, and consumer applications — eliminating the need for costly redesigns and part requalification.

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