GaN power amplifiers deliver exceptional output and power-added efficiency

Millitech has released new Gallium Nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) in E-Band and W-Band applications. Offering up to 2.5W of output power and up to 20% PAE, typical gain figures range from 15dB to 40dB. Single device models are available with nearly 1W of output power, or two-way and four-way solid state power amplifiers (SSPAs) with up to 2.5W of saturated output power are available. Higher power outputs are also available. Each amplifier in the series come standard with internal voltage regulation, bias-sequencing circuitry, and reverse voltage protection. These E-band and W-band GaN PAs can be used in applications ranging from e-band radio, remote sensing, as high power millimeter-wave sources, and are high enough quality for test and measurement applications. The high output power in E-band and W-band PAs eliminates the need for comparatively large and expensive combiners and waveguide interconnect necessary for less powerful amplifiers.