Dual-channel gate driver designed to drive power MOSFETs, IGBTs and SiC MOSFETs

The UCC21521 from Texas Instruments is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz with best-in-class propagation delay and pulse-width distortion. The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 100V/ns common-mode transient immunity. Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC. This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time. The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out protection. With all these advanced features, the device enables high efficiency, high power density and robustness in a wide variety of power applications.