MOSFET uses trench technology to minimise gate charge and low on-resistance
08-07-2016 |
Mouser Electronics
|
Power
Available from Mouser, the ON Semiconductor VEC2315 Dual P-Channel Power MOSFET uses trench technology to minimise gate charge and low on-resistance. It features a 4V drive and an ESD diode-protected gate in a low-profile package. The MOSFET offers a -60V drain-to-source voltage, low 194mohm@4V on-resistance, and -2.5A drain current.
The device improves system efficiency by reducing conduction losses and heat dissipation. It is well-suited for applications with low gate charge or low on-resistance requirements such as motor drivers.
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