World’s first 16-die stacked NAND flash memory with TSV technology

06-08-2015 | Toshiba | New Technologies

Toshiba has development what it believes to be the world’s first 16-die (max.) stacked NAND flash memory utilising Through Silicon Via (TSV) technology.

Previously, stacked NAND flash memories were connected together with wire bonding in a package. Instead, TSV technology utilises the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high-speed data input and output, and reduces power consumption.

Toshiba’s TSV technology achieves an I/O data rate of over 1Gbps which is higher than any other NAND flash memories with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately 50%2] power reduction of write operations, read operations, and I/O data transfers.

This new NAND flash memory provides the ideal solution for low latency, high bandwidth and high IOPS/Watt in flash storage applications, including high-end enterprise SSD. A part of this applied technology was developed by the New Energy and Industrial Technology Development Organization (NEDO), says the company.

Flash Memory Summit 2015, August 11 to 13, Santa Clara, USA.

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