New high-speed low-voltage 8Gb monolithic CMOS DDR3L SDRAM

16-07-2015 | Alliance Memory | Semiconductors

Alliance Memory has introduced a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8Gb density in the 96-ball, 9mm x 14mm, lead (Pb)-free FBGA package. Featuring state-of-the art silicon provided by Micron Technology, Inc., the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800MHz. With minimal die shrinks, the single-die 8-Gb DDR3L SDRAM released today provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications - eliminating the need for costly redesigns and part requalification. This 8-Gb DDR3 is a logical choice for users that require increased memory yet face board space constraints, says the company. The AS4C512M16D3L operates from a single +1.35-V power supply and is available with a commercial temperature range of 0C to +95C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40C to +95C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits. The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance.
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By Craig Dyball