Highest current gallium nitride power transistor on market hits 60A
GaN Systems has launches the latest addition to its popular range of E-mode
GaN-on-Silicon high-power transistors based on its three core proprietary
technologies. The new GaN high-power enhancement-mode device, the GS65516T,
offers the highest current capability on the market at 60A, says the
The GS65516T 650V E-mode power switch features the company's proprietary
topside cooling configuration which allows the device to be cooled using
familiar and conventional heat sink or fan cooling techniques. It is based
on the company's ultra-low FOM Island Technology die design, packaged in low
inductance and thermally efficient GaNPX packaging and measures 9mm x 7.6mm
x 0.45mm. Additional features of the GS65516T 650V E-HEMT include reverse
current capability, integral source sense and zero reverse recovery loss.
Dual gate pads help design engineers achieve optimal board layout.
The GS65516T suits high-frequency, high-efficiency power conversion
applications such as on-board battery chargers, 400V DC-DC conversion,
inverters, uninterruptable power supplies (UPS) and VFD motor drives, AC-DC
power supplies (PFC and primary) and VHF small form factor power adapters.
The GS65516T is available packaged on tape and reel or mini-reel.
"GaN is real and happening right now." said Girvan Patterson, president, GaN
Systems. "Our devices boast industrial-scale power and since becoming
available commercially last year, hundreds of leading companies across the
globe have embraced our technology to make sure they are among the first to
market with new products that bring the benefits of GaN to products ranging
from solar inverters to ultra-slim TVs. The major players are well aware
that gallium nitride device technology is a true game-changer. GaN Systems'
core IPs make our devices easier for designers to work with, and we are now
seeing real products that harness GaN's power come to market. For example,
on our stand here at PCIM, we are showing a vehicle power inverter from
leading US technology company, DRS Technologies, a 2 kWh tactical power pack
from Virideon, and a 5kW 3-phase inverter power module from LS Industrial
Systems of Korea."
GaN Systems is the first company to have developed and brought a
comprehensive product range of devices with current ratings from 8A to 250A
to the global market - its Island Technology die design, combined with its
extremely low inductance and thermally efficient GaNPX packaging and Drive
Assist technology means the company's GaN transistors offer a 40-fold
improvement in switching and conduction performance over traditional silicon
MOSFETs and IGBTs, says the company.