New drop-in replacement high-speed CMOS DDR SDRAMs

07-04-2015 | Alliance Memory | Semiconductors

Alliance Memory has introduced new high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 256Mb (AS4C32M8D1), 512Mb (AS4C64M8D1), and 1Gb (AS4C64M16D1) in the 60-ball 8mm x 13mm x 1.2mm TFBGA package and the 66-pin TSOP II package with a 0.65mm pin pitch. The devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 are internally configured as four banks of 32M word x 8 bits, 64M word x 8 bits, and 64M word x 16 bits, respectively. The DDR SDRAMs offer a synchronous interface, operate from a single +2.5V (± 0.2V) power supply, and are lead (Pb)- and halogen-free. The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 feature fast clock rates of 200 MHz and 166 MHz and are offered in commercial (0C to +70C) and industrial (-40C to +85C) temperature ranges. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. With the addition of the AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 to its portfolio, Alliance Memory now offers the most extensive line-up of DDR SDRAMs in the industry, featuring densities of 64Mb, 128Mb, 256Mb, 512Mb, and 1Gb. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components, says the company.

By Electropages Admin