New 20V n-channel TrenchFET power MOSFET in ultra-compact thermally-enhanced package

19-02-2015 | Vishay | Power

Vishay has released a new 20V n-channel TrenchFET power MOSFET in the ultra-compact thermally enhanced PowerPAK SC-70 package.

Providing increased power density and reliability for portable electronics, the SiA466EDJ offers the industry's highest package-limited continuous drain current for a 20V MOSFET in the 2mm x 2mm footprint area, and it is the only such device with a VGS rating of ±20V to provide integrated ESD protection.

The SiA466EDJ's 25A package-limited continuous drain current is 13% higher than the closest competing device. In load switch applications, the high current rating provides an additional safety margin for large in-rush currents and fault conditions including short circuits. The MOSFET's 2500 V integrated ESD protection prevents static damage from handling or human body contact.

The device released today is a versatile solution for power management in portable equipment designs. The combination of a high current rating and excellent on-resistance times gate charge figure of merit (FOM) optimizes synchronous buck converters and load switches in wireless and fast battery chargers, smartphones, tablets, notebook computers and e-locks.

To increase efficiency in high-frequency switching applications, the SiA466EDJ's low on-resistance of 9.5mohm (10V), 11.1mohm (6V), and 13mohm (4.5V) reduces conduction losses, while its low 6.3nC typical gate charge and 0.9ohm gate resistance minimize switching losses. The MOSFET is 100% RG-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiA466EDJ are available now, says the company.

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