Latest N-channel power MOSFETs achieve industry’s lowest resistance

20-01-2015 | Texas Instruments | Power

Texas Instruments (TI) has added eleven new N-channel power MOSFETs to its NexFET product line, including the 25V CSD16570Q5B and 30V CSD17570Q5B for hot-swap and ORing applications with the industry’s lowest on-resistance (Rdson) in a QFN package. In addition, TI’s new 12V FemtoFET CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84-percent below competitive devices in a tiny 0.6mm by 1mm package, says the company.

The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For example, the 25V CSD16570Q5B supports a maximum of 0.59 milliohms of Rdson, while the 30V CSD17570Q5B achieves a maximum of 0.69 milliohms of Rdson.

TI’s new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC-DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720.

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