Dual silicon carbide MOSFET gate drivers optimized to ensure maximum performance

19-01-2015 | Mouser Electronics | Power

Designed to drive Cree's CAS300M17BM2 SIC MOSFET modules, the PT62SCMD12 and PT62SCMD17 are single-board dual silicon carbide (SiC) MOSFET gate drivers optimized to ensure maximum performance for SiC modules. They are production-ready with all the features required for an IGBT module gate driver. The drivers feature a wide power supply range from 15V to 24V. They provide different driving capabilities - the PT62SCMD12 is a 1200V driver, whereas the PT62SCMD17 is a 1700V driver. Each SIC MOSFET Driver solution provides low jitter at 1ns (typical), gate driving at +20V/-6V, switchable frequencies up to 125kHz, and output currents up to +/- 20A with high dV/dt immunity. Both solutions require no optocouplers, and communicate through an RS422 input interface. A built-in dead-time generator enables both solutions to be fully adjustable for both dead and blanking time. Other features include over-current protection and under- and over-voltage lockout. The modules can control multiple MOSFETs in parallel and are suitable for a variety of power management solutions, including HF resonant converters / inverters, solar and wind inverters, UPS and SMPS devices, motor drives and traction-based applications.
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By Craig Dyball