New serial quad I/O SuperFlash devices with 1.8V low-power 4-Mbit and 8-Mbit memory
With the introduction of the SST26WF080B and SST26WF040B, Microchip has
expanded its 1.8V serial quad I/O (SQI) SuperFlash memory family. The
devices offer 4-Mbit and 8-Mbit of memory and are manufactured with
Microchip’s high-performance SuperFlash technology, which provides the
industry’s fastest erase times and superior reliability, says the company.
The SST26WF080B/040B provide the fastest erase times of any competing device
due to the use of SuperFlash technology. Sector and block erase commands
are completed in just 18ms and a full chip erase operation is completed in
35ms. Competing devices require in the range of 5 to 15 seconds to complete
a full chip erase operation, making SST26WF080B/040B approximately 300 times
faster. The fast erase times can provide a significant cost savings to
users by minimising the time required for testing and firmware updates,
therefore increasing their manufacturing throughput.
The SQI interface is a high-speed 104 MHz quad I/O serial interface which
allows for high data throughput in a low pin-count package. This interface
enables a low latency execute-in-place (XIP) capability, allowing programmes
to be stored and executed directly from the Flash memory and eliminating the
need for code shadowing on a RAM device. The SST26WF080B/040B provides
faster data throughput than a comparable x16 parallel Flash device without
the associated high cost and high-pin count of parallel Flash. The SQI
interface also offers full command-set backwards compatibility to the
traditional Serial Peripheral Interface (SPI) protocol.
Designed for low-power consumption, the SST26WF080B/040B helps to maximise
battery life in portable powered applications. Standby current consumption
is 10 µA typical and a deep power-down mode further reduces current
consumption to 1.8 µA typical. Active read current at 104 MHz is 15 mA
typical. The combination of 1.8V operation with low-power consumption and
small form factor packaging makes the SST26WF080B/040B an excellent choice
for applications such as mobile handsets, Bluetooth headsets, GPS, camera
modules, hearing aids and any battery-powered devices.
The SST26WF080B/040B offers excellent quality and reliability with 100 years
data retention and device endurance of over 100,000 erase/write cycles.
Enhanced safety features include software write protection of individual
blocks for flexible data/code protection and a One-Time Programmable (OTP) 2
Kbyte Secure ID area. These features protect against unauthorised access
and malicious read, programme and erase intentions. The device also
includes a JEDEC-compliant Serial Flash Discoverable Parameter (SFDP) table,
which contains identifying information about the function and capability of
the SST26WF080B/040B in order to simplify software design.
The SST26WF080B/040B devices are available for sampling and volume
production in 8-contact WSON (6mm x 5mm), 8-lead SOIC (150 mil), 8-contact
USON (2mm x 3mm) and 8-ball XFBGA (Z-Scale) packages, says the company.