SemiQ Showcases Gen 3 Silicon Carbide MOSFETs with Wafer-Level Reliability

At PCIM 2025, Electropages spoke with Bruce Dickinson of SemiQ about their latest Gen 3 silicon carbide MOSFETs. The new devices address previous gate drive limitations with ±18V compatibility, offer improved high-frequency switching, and benefit from a smaller die for reduced cost per unit. 

What sets SemiQ apart is its wafer-level burn-in process—every die is tested under high temperature and voltage before shipment, ensuring known-good die for mission-critical designs. Combined with AEC-Q101 qualification, high blocking voltage margins, and robust press-fit modules, SemiQ is delivering reliable, application-ready SiC technology for industrial and automotive markets. 

Learn more at www.semiq.com