MOSFET on-resistance cut by 17%
A new generation of super junction (SJ) deep trench semiconductor technology for high-efficient power MOSFETs was unveiled at the show by Toshiba Electronics Europe.
The devices are based on the new DTMOS V process and the company says they will be able to operate with lower EMI noise and reduced Rds(ON) (on resistance) compared to previous DTMOS IV MOSFETs.
An advantage of the DTMOS V process is it is based on a single epitaxial process involving deep trench etching followed by P-type epitaxial growth. This means the deep trench filling process results in a narrowing of cell pitch and a subsequent reduction of Rds(ON) when compared with many planar processes. It also allows an improved thermal coefficient of Rds(ON) compared to conventional super junction MOSFETs using multi-epitaxial growth process.
The company says that with DTMOS V it has been able to reduce Rds(ON) of the DPAK TK290P60Y by up to 17%. It is expected that the first MOSFETs based on this fifth generation process will offer ratings of 600V and 650V.
High voltage device family expanded
Toshiba Electronics Europe also used the PCIM show to announce it has expanded its HV-IPD (high-voltage intelligent power device) line-up with a 600V, 5.0A part for PWM control of BLDC motors. The TPD4207F will simplify the implementation of high-efficiency BLDC applications ranging from home appliances to industrial pumps and fans, says the company.
The device combines controller and driver logic, high-voltage MOSFETs in a three-phase bridge output, bootstrap diodes and protection functionality.
Toshiba has employed its high-voltage Super Junction MOSFET technology (DTMOS IV) and driver IC in a multi-chip configuration.
Modules suit electric vehicle apps
At Nuremberg event Infineon Technologies presented a power module family HybridPACK Double Sided Cooling (DSC) for hybrid and electric vehicles (HEV). These modules measure 42 x 42.4 x 4.77 mm and they target HEV apps such as main inverters and generators with a typical power range of 40 to 50 kW. To support higher power they can be used in parallel configurations.
Stray inductance is low at 15nH while blocking voltage was increased to 700 V. Infineon say these operating characteristics support the development of inverter systems with reduced switching losses of The module can be directly attached to a cooler without external isolation thus simplifying system integration.
Each integrated IGBT chip is equipped with an on-chip current sensor for over current protection and an on-chip temperature sensor provides de-rating and quick shut-off in case of over-temperature.
By combining double sided chip cooling with electrical isolation of the heat sinks, the thermal resistance R thJC of the HybridPACK DSC is cut to 0.1 Kelvin/Watt (K/W).
Designing from input source to system loads
At PCIM Vicor showed its new Power System Designer online design tool which lets designers create multi-output, modular power systems from the input source to system loads.
Engineers specify their AC or DC input source and operating range and their required output voltages and respective power (or current), regulation and isolation specifications, and the tool automatically generates and identifies the best alternative solutions.
Each solution is characterised by figures of merit including highest operating efficiency, lowest component count, lowest cost, smallest footprint and recommended best fit.
Each solution can be viewed using the company’s editable Whiteboard tool.
For any selected design, the Power System Designer tool can display a visual representation of the mechanical layout of the system and generate a complete Bill-of-Materials along with ordering and pricing information.
Sensor in a coreless package
Allegro MicroSystems Europe showed its ACS780xLR, a fully integrated linear current sensor IC in a new coreless package designed to sense AC and DC currents up to 150 A.
The automotive-grade, low-profile (1.5 mm thick) sensor IC package has a footprint of 6.4 × 6.4 mm. The Hall sensor technology used in the ACS780xLR incorporates common-mode field rejection to optimise performance in the presence of interfering magnetic fields generated by nearby current-carrying conductors.
The device consists of a precision, low-offset linear Hall circuit with a copper conduction path located near the die. Applied current flowing through this copper conduction path generates a magnetic field which the Hall IC converts into a proportional voltage. Accuracy is optimised through the close proximity of the primary conductor to the Hall transducer and programming of the sensitivity and zero-ampere output voltage at the Allegro factory.
Low conduction loss IGBTs
ON Semiconductor showed its new series of insulated gate bipolar transistors (IGBTs) which use its proprietary Ultra Field Stop trench technology.
The NGTB40N120FL3WG, NGTB25N120FL3WG are 1200V devices and, says the company, have good total switching loss (Ets) characteristics because of a very wide highly activated field-stop layer and optimised co-pack diode.
The NGTB40N120FL3WG has an Ets of 2.7 millijoules (mJ) while the NGTB25N120FL3WG has an Ets of 1.7 mJ. Both devices have a VCE(sat) of 1.7V at their respective rated currents. The NGTB40N120L3WG is optimised for low conduction losses and has a VCE(sat) of 1.55V, at rated current, with an Ets of 3 mJ.