LTE-A throughput hits 1 GBit/s

09-03-2016 |   |  By Paul Whytock

Test and measurement company Anritsu has demonstrated peak throughput for an LTE-Advanced (LTE-A) device and network simulator using 3CA (3x Carrier Aggregation) and 4x4 MIMO with 256QAM modulation.

The demonstration employed devices featuring the Qualcomm Snapdragon X16 LTE modem and the Anritsu MD8430A LTE Simulator. By doing so Anritsu was able to successfully show support for stable IP-layer data rates of up to 1 GBit/s in the downlink. The solution was recently demonstrated at the Mobile World Congress in Barcelona.

A single MD8430A can simulate three contiguous LTE baseband cells on a single RF carrier. With two MD8430A simulators in a master/slave combination it can provide aggregated carriers with higher-order MIMO, says the company. Cells can be placed in any licensed or unlicensed band using newly introduced RF capability to cover 350 MHz to 6 GHz.

The MD8430A is a scalable LTE network simulator, with four models and LTE FDD and TDD software options are available for any model.

A related Rapid Test Designer graphical test software environment is claimed to enable quick scripting and debug of tests with full automation and an intuitive user interface as well as dedicated layer 3 and lower-layer libraries for maximum flexibility.

Anritsu says simulation of three simultaneous cells on a single RF is available now with the newly introduced MD8430A-004, and coverage of 350 MHz to 6 GHz is available now with the new MD8430A-006.


paul-whytock.jpg

By Paul Whytock

Paul Whytock is European Editor for Electropages. He has reported extensively on the electronics industry in Europe, the United States and the Far East for over twenty years. Prior to entering journalism he worked as a design engineer with Ford Motor Company at locations in England, Germany, Holland and Belgium.

Related articles