Next-gen package for power MOSFETs attains significant thermal and on-resistance reductions

Toshiba Electronics Europe GmbH has launched two new N-channel power MOSFETs, the 80V TPM1R908QM and the 150V TPM7R10CQ5. These latest offerings adopt the company's innovative SOP Advance (E) package, designed to significantly enhance performance in SMPS for demanding industrial equipment, including data centres and communication base stations.

The new package marks a substantial improvement over the company's existing SOP Advance(N) package, lowering package resistance by approximately 65% and thermal resistance by approximately 15%. These package improvements directly translate into superior device performance. The 80V TPM1R908QM exhibits a reduction in drain-source on-resistance (RDS(ON)) of approximately 21% and channel-case thermal resistance (Rth(ch-c)) of approximately 15% compared to the company's existing product, the TPH2R408QM, which has the same voltage rating. Similarly, the 150V TPM7R10CQ5 attains approximately 21% lower RDS(ON) and approximately 15% lower Rth(ch-c) than its existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high-speed body diode for increased efficiency in synchronous rectification.

The reductions in on-resistance and suppressed temperature rise due to improved thermal resistance contribute to a lower overall on-resistance, even considering positive temperature characteristics. This combination ultimately attains lower loss and higher efficiency in critical applications such as SMPS for industrial equipment, including those powering data centres and communication base stations.

The TPM1R908QM features a drain-source voltage (VDSS) of 80V, a drain current (ID) of 238A (Tc=25°C), and a maximum RDS(ON) of 1.9mΩ (VGS=10V). The TPM7R10CQ5 offers a VDSS of 150V, an ID of 120A (Tc=25C), and a maximum RDS(ON) of 7.1mΩ (VGS=10V). Both products have a channel temperature (Tch) of 175C and a maximum Rth(ch-c) of 0.6C/W (Tc=25°C). The SOP Advance(E) package typically measures 4.9mm × 6.1mm.

To further support circuit design for SMPS, the company also provides a G0 SPICE model for quick verification of circuit function, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.