Ultra-compact SiC MOSFETs enhance power density and efficiency in industrial equipment

Toshiba Electronics Europe GmbH has announced volume shipments of its third-generation, 650V SiC MOSFETs in the compact DFN8x8 package for industrial equipment, including the TW031V65C, TW054V65C, TW092V65C, and TW123V65C. An important characteristic of the company's next-generation process is the consistently low drain-source on-resistance (RDS(ON)) temperature coefficient of the devices. The low RDS(ON) x gate-drain charge (Qgd) FoM, therefore, allows engineers to improve the power density and efficiency of numerous high-voltage applications, including SMPSs, EV charging stations, UPS, and PV inverters.

The surface-mount DFN8x8 package lowers volume by more than 90% compared to existing lead-inserted packages, such as TO-247 and TO-247-4L(X), improving the power density of equipment while allowing automated assembly. Surface mounting also decreases parasitic impedance, thereby decreasing switching losses and contributing to the low FoM, which in turn improves efficiency. With less heat requiring dissipation, high-voltage power system designs can be simpler and more compact, making them suitable for space-constrained applications or further miniaturisation.

Additionally, the multi-pin device allows a Kelvin connection of its signal-source pin for gate drive. This capability lowers the inductance influence in the source wire within the package, allowing high-speed switching performance. As a result, under specific test conditions (VDD=400V, VGG=+18/0V, ID=20A, RG =4.7Ω, L=100µH), one of the new products, the TW054V65C, decreases turn-on loss by approximately 55% and turn-off loss by approximately 25% compared to existing Toshiba products, thereby helping to lower power loss in equipment.