14-05-2025 | Alpha and Omega Semiconductor | Power
Alpha and Omega Semiconductor Limited (AOS) has released its next generation (Gen3) 1200V aSiC MOSFETs designed to maximise efficiency in a growing market of high-power applications. These Gen3 MOSFETs provide up to 30% improved switching FOM compared to its previous generation while maintaining low conduction losses at high load conditions. The performance improvements do not compromise ruggedness and reliability, as they have full AEC-Q101 qualification, with extended lifetime and HV-H3TRB capabilities.
As power demands surge in EVs, AI data centres, and renewable energy systems, inefficiencies in power conversion stages can significantly strain electrical supply and cooling systems. For EV designs, these Gen3 αSiC MOSFETs allow engineers to create higher power density systems with greater efficiency, lowering battery consumption and extending vehicle range. Future AI data centres adopting high-voltage DC (HVDC) architectures, such as 800V or ±400V, will benefit from decreased losses and increased power density to satisfy growing power demands. To support these higher system voltages, the devices will be critical for allowing new topologies with the necessary efficiency.
The new AOS Gen3 1200V MOSFETs are obtainable with an on-resistance (Rds(on)) range from 15mΩ (AOM015V120X3Q) to 40mΩ (AOM040V120X3Q) in a TO27-4L package. The company plans to roll out its Gen3 MOSFETs in additional surface mount and topside cooled packages and in case modules. It has also qualified a larger Gen3 1200V/11mΩ MOSFET die designed for high-power EV traction inverter modules and is available for wafer sales.
“Electric vehicles and AI are transforming industries, but they require advanced power systems that can maintain efficiency even as energy demands increase,” said David Sheridan, vice president of Wide Bandgap products at AOS. “We’re excited that this next generation of AOS aSiC MOSFETs can deliver the performance our customers require while making a positive environmental impact.”