04-08-2022 | Infineon | Semiconductors
Infineon Technologies AG has added HYPERRAM 3.0 to its portfolio of high-bandwidth, low-pin count memory solutions. The device provides a new, 16-bit extended version of the HyperBus interface that doubles throughput to 800MBps. With the solution, the company offers a portfolio of high-bandwidth memories with low pin count and low power. It is an ideal fit for applications needing expansion RAM, incorporating video buffering, factory autoV2X, and applications requiring scratch-pad memory for intense mathematical calculations.
“With nearly three decades of memory solutions knowledge, we are excited to bring another industry-first to the market. The new HYPERRAM 3.0 memory solutions achieve a far higher throughput-per-pin than existing technologies in the market such as PSRAMs and SDR DRAMs,” said Ramesh Chettuvetty, senior director of Applications and Marketing at Infineon’s Automotive Division. “Our low-power features enable better power consumption without sacrificing throughput, which also makes this memory ideal for industrial and IoT solutions.”
The company is a stand-alone PSRAM-based volatile memory that delivers a simple and cost-optimised way to add extension memory. The data rates are equivalent to SDR DRAM but with much lower pin-count and power needs. The increased per-pin data throughput of the HyperBus interface makes it possible to use MCUs with fewer pins and PCBs with fewer layers. These supply opportunities for lower-complexity and, therefore, cost-optimised designs to support target applications.