N-channel enhancement mode FETs provide ESD protected gate fast switching times

Diotec Semiconductor MMBT7002K N-Channel Enhancement Mode FETs, available now from Mouser, provide ESD-protected gate fast switching times excellent for signal processing, logic level converter, and driver applications.

The device offers a 60V drain-source voltage, 20V gate-source voltage, and 350mW power dissipation. The devices are available in a SOT-23 package and operate at an -55C to 150C junction temperature.

The devices are compliant with RoHS, REACH, and conflict minerals.