Fast level-shift SOI with integrated bootstrap diodes offer superior robustness

23-03-2021 | Infineon | Semiconductors

Infineon Technologies AG has grown its portfolio with new 650V half-bridge and high and low side gate drivers. The new devices are based on the company's unique silicon-on-insulator (SOI) technology. They offer leading negative VS transient voltage immunity and monolithic integration of real bootstrap diodes. These features lessen BOM and facilitate more robust designs with MOSFETs and IGBTs in a small form factor. The fast level-shift family is aimed at high-frequency applications like SMPS and UPS, as well as industrial drives and embedded inverters, power tools, home appliances, motor control for fans and pumps.


The EiceDRIVER 2ED2110S06M is a 2.5A high current driver, while EiceDRIVER 2ED2101/03/04 are 0.7A low current drivers. The low current devices are offered in DSO-8, while the 2.5A driver is supplied in a DSO-16W package. With 90ns propagation delays and tight 10ns maximum delay matching, they support high frequency switching in the 500kHz range and traditional motor control applications. The 2ED2110S06M supports shutdown functionality, separate logic and power ground. The integrated bootstrap diode provides ultra-fast reverse recovery with a typical 30Ohm on resistance.


Negative VS transient voltage immunity of -100V with repeating 300ns wide pulses supports excellent robustness and dependable operation. Integrated dead-time with cross-conduction logic and independent UVLO for high and low side voltage supplies provide safe operation.

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