High speed PIN photodiode enables improved bio sensor performance

22-02-2021 | Vishay | Semiconductors

Vishay Intertechnology widens its optoelectronics portfolio with the debut of a new high-speed silicon PIN photodiode with enhanced sensitivity to visible and infrared light. Providing a rectangular 4.8mm x 2.5mm top-view, surface-mount package with an industry-low 0.48mm profile, the Vishay Semiconductors VEMD8081 provides improved typical reverse light current of 33µA for enhanced bio sensor performance in wearable devices and medical applications.


The device provides 15% greater reverse light current than its predecessor, the VEMD8080 while preserving the same package dimensions. For designers, this offers a drop-in replacement that can increase performance by improving signal output or prolong battery life by decreasing LED current.


With its high sensitivity and a radiant-sensitive area measuring 5.4mm2, the device uses the company's wafer technology to identify visible and near-infrared radiation over a broad spectral range from 350nm to 1100nm. For high sampling rates, the device provides fast switching times and low capacitance of 50pF.


The device offers a ± 65-degree angle of half-sensitivity, an operating temperature range of -40C to +85C, and 840nm wavelength of peak sensitivity. RoHS-compliant, halogen-free, and Vishay Green, the photodiode gives a moisture sensitivity level (MSL) of 3 in accordance with J-STD-020 for a floor life of 168 hours.

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