Half-bridge driver embedded with two GaN transistors

09-11-2020 | Mouser Electronics | Power

Mouser Electronics now stocks the MASTERGAN1 SiP from STMicroelectronics.


This SiP implements a high-power density power supply with the inclusion of a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs offers an RDS(ON) of 150mOhm and 650V drain-source breakdown voltage. The integrated bootstrap diode can swiftly supply the high side of the embedded gate driver.


The SiP gives UVLO protection on the lower and upper driving sections. This protection stops the power switches from performing in low efficiency or dangerous conditions, and the interlocking function evades cross-conduction conditions. The extended range of the input pins enables easy interfacing with microcontrollers, DSP units, or Hall effect sensors.






Applications for the SiP include switch-mode power supplies, high-voltage PFC, DC-DC and DC/AC converters, chargers and adapters, UPS Systems, and solar power.

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