SiC MOSFET offers significantly reduced losses

22-10-2020 | Toshiba | Power

Toshiba Electronics Europe GmbH has released a 1200V SiC MOSFET for high power industrial applications incorporating 400V AC input AC/DC power supplies, PV inverters and bi-directional DC-DC converters for UPS.


The new TW070J120B power MOSFET is based upon SiC, a new wide bandgap material that enables devices to provide high voltage resistance, high-speed switching, and low On-resistance in comparison to conventional MOSFETs and IGBT products based upon Si. Subsequently, the new MOSFET makes a considerable contribution to lowering power consumption and enhancing power density, leading to opportunities for system downsizing.


Fabricated with the company's second-generation chip design, the new SiC MOSFET provides enhanced reliability. Further, the device realises low input capacitance of 1680pF (typ), a low gate-input charge (Qg) of 67nC (typ), and a drain-to-source On-resistance (RDS(ON)) of only 70mOhm (typ).


Housed in a TO-3P(N) package, the new MOSFET will allow the design of higher efficiency power solutions, particularly in industrial applications, where the improved power density will also add to decreased equipment size and weight.

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