SiC MOSFETs meet future efficiency and power density expectations

29-09-2020 | RS Components | Power

RS Components now stocks ON Semiconductor’s newest 1200V-rated MOSFETs. Based on SiC technology, these power discretes can push the performance envelope.

The new devices support accelerated switching speeds (with rise times from as little as 10ns). Displaying on-resistance figures going down to 20mOhm with industry-leading gate charge values, they are subject to the minimum of power losses. Extremely robust, these devices can manage with ultra-high current surge pulses. The devices have a dielectric breakdown field strength that is an order of magnitude greater than for equivalent silicon MOSFETs, with a working temperature range of -55C to +175C being covered.

The devices are supplied in compact TO247 packages and surface mount D2PAK. They are Pb−free and conform fully with RoHS environmental directives, as well as being 100% UIL tested.

Key applications incorporate UPS, electric vehicle charging stations, DC-DC converters, motor control systems, and solar inverters. AEC Qualified variants are available.

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