SMART Modular Technologies has announced new higher density 16GB and 32GB NVDIMMs which run at DDR4-3200 high-speed bus rates.
These products, incorporating Micron advanced DDR4 DRAM technology together with the company's high-speed PCB designs, greatly improve signal integrity, producing broader design margins even at the highest DDR4 bus speeds. NVDIMMs have seen wide adoption in applications needing 'normal' memory operation at DRAM bus clock rates. The new NVDIMMs also use Micron advanced 3D NAND technology which delivers highly reliable memory persistence in the event of a system crash or power outage, with minimal back-up and restore times.
“We are pleased that SMART is employing Micron’s DRAM and 3D NAND technologies in its newest leading-edge NVDIMM products to offer maximum reliability and performance,” stated Malcolm Humphrey, vice president of marketing of the Compute and Networking Business Unit at Micron. “Enterprises that need resilient memory and storage to ensure constant availability of mission-critical information will benefit from SMART’s NVDIMMs.”
The NVDIMMs function as standard DDR4 RDIMMs with unlimited write endurance merged with integrated persistence capability. This produces highly efficient write acceleration in flash storage appliances and high-speed recovery capability in cloud data centres. The company's NVDIMMs offers the full feature set currently illustrated by JEDEC standards. Further, AES-XTS 256 gives enhanced data protection. The company also delivers a comprehensive set of intelligent back-up power modules in varied form factors which offer temporary power during back-up operations.