Isolated dual-channel gate drivers offer high efficiency and robustness

08-07-2020 | Texas Instruments | Power

Texas Instruments UCC21320-Q1 Isolated Dual-Channel Gate Drivers are supplied with 4A source and 6A sink peak current. They are created to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz offering best-in-class propagation delay and pulse-width distortion. The input side is isolated from the two output drivers by a 3.75kVRMS basic isolation barrier, providing a minimum of 100V/ns CMTI. The internal functional isolation between the two secondary-side drivers provides a working voltage of up to 1500VDC.

Every driver is able to be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable DT. A disable pin shuts down the outputs simultaneously and provides normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low. Each device takes VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver ideal for interfacing with analog and digital controllers. All supply voltage pins offer UVLO protection. With all these advanced features, the device delivers high efficiency, high power density, and robustness.

Suitable applications include HEV and BEV battery chargers, isolated converters in DC-DC and AC/DC power supplies, motor drive and DC-to-AC solar inverters, and UPS.

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