Toshiba Electronics Europe has released two new 80V N-channel power MOSFETs based upon their newest generation U-MOSX-H process. Both devices are ideal for an extensive range of power applications where low-loss operation is important, including highly efficient AC/DC and DC-DC conversion in data centres and communication base stations as well as a wide range of motor drive equipment.
Both the TPH2R408QM and TPN19008QM are 80V U-MOSX-H products displaying a decrease of around 40% in drain-source on-resistance (RDS(ON)) compared to corresponding 80V products in previous processes such as U-MOSVIII-H. As a result, the TPN19008QM has an RDS(ON) value of 19mOhm (max.) while the TPH2R408QM value is only 2.43mOhm.
Optimising the device structure has enhanced the trade-off between RDS(ON) and gate charge characteristics by up to 15% and the trade-off between RDS(ON) and output charge by 31%. Connecting this with the improvements in RDS(ON) means that the new devices provide the lowest power dissipation in the industry.
Both devices are contained in surface-mount packages and rated for a drain-source voltage (VDSS) of 80V. They can perform at channel temperatures as high as 175C. The TPN19008QM is rated for a drain current (ID) of 34A and is housed in a 3.3mm x 3.3mm TSON advance package while the TPH2R408QM is rated for an ID of 120A and housed in a 5mm x 6mm SOP advance package.