Isolated gate drivers for driving SiC or GaN transistors

21-04-2020 | Mouser Electronics | Power

Maxim MAX22700–MAX22702 Isolated Gate Drivers, available now from Mouser, are a family of single-channel isolated gate drivers with ultra-high CMTI of 300kV/μs (typ). The devices are intended to drive SiC or GaN transistors in multiple inverter or motor control applications. All devices have integrated digital galvanic isolation using the company's proprietary process technology. The devices provide variants with output options for gate driver common pin GNDB (MAX22700), Miller Clamp (MAX22701), and include an adjustable under-voltage-lockout UVLO (MAX22702). Also, alternatives are provided as differential (D versions) or single-ended (E versions) inputs. These devices transfer digital signals among circuits with different power domains. All of the products in the family feature isolation for a withstand voltage rating of 3kVRMS for 60 seconds.

All devices sustain a minimum pulse width of 20ns with a maximum pulse width distortion of 2ns. The part-to-part propagation delay is equalled within 2ns (max) at +25C ambient temperature, and 5ns (max) over the -40C to +125C operating temperature range. This feature decreases the power transistor’s dead time, therefore enhancing overall efficiency. The MAX22700 and the MAX22702 have a maximum RDSON of 1.25Ohm for the low-side driver, and the MAX22701 has an RDSON of 2.5Ohm for the low-side driver. All devices provide a maximum RDSON of 4.5Ohm for the high-side driver.

Typical applications include isolated gate driver for inverters, motor drives, and UPS and PV inverters.

By Natasha Shek