MOSFET driver includes fault detection to simplify circuit design

25-03-2020 | Toshiba | Power

Toshiba Electronics has released a new IGBT/MOSFET gate driver furnished with extra built-in functionality. The new TLP5231 can simplify the design task in an extensive range of applications including industrial inverters, UPS, power conditioners for solar energy and motor controls.

The pre-driver has a pair of outputs that are intended to drive external p-channel and n-channel MOSFETs employed for current buffers. This enables the usage of a broad range of MOSFETs with multiple current ratings, meaning that the IGBT is able to be controlled by a rail to rail gate voltage. The driver can source and sink peak currents up to 2.5A and is rated for 1A continuously.

The device includes overcurrent detection, implemented by sensing VCE(sat) as well as UVLO, both of which provide an open collector fault signal to the primary side. These features are not offered on existing products, and their inclusion on the device significantly eases the process of gate drive circuit design.

Additionally, the 'gate voltage soft turn off-time' after VCE(sat) overcurrent detection can be controlled by another external n-channel MOSFET. Propagation delays (L/H & H/L) are as low as 100ns.

Despite being contained in a tiny SO16L surface mount package, the device provides an isolation voltage (BVs) of 5000Vrms (min.) with an internal isolation thickness in excess of 0.4mm. Creepage and clearance distances are at least 8mm, making it ideal for safety-critical applications.

By Natasha Shek