Power MOSFETs developed for ZVS / soft-switching PWM topologies

13-05-2015 | Mouser Electronics | Power

Vishay SiHx28N60EF / SiHx33N60EF EF Series Power MOSFETs are now stocked by Mouser. The 600V fast body diode N-Channel power MOSFETs were developed for ZVS / soft switching PWM topologies such as phase shifted bridges and LLC converter half bridges. The SiHx28N60EF / SiHx33N60EF EF Series Power MOSFETs increase reliability in these applications by delivering a 10x lower Qrr than standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage quicker, helping to avoid failure from shoot-through and thermal overstress. In addition, the reduced Qrr results in lower reverse recovery losses compared to standard MOSFETs. The devices' ultra-low on-resistance and gate charge translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications. Based on E Series superjunction technology, the series is Avalanche energy rated (UIS) and available in TO-220, TO-263, TO-220F, and TO-247AC packages.
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