Power MOSFETs developed for ZVS / soft-switching PWM topologies
13-05-2015 |
Mouser Electronics
|
Power
Vishay SiHx28N60EF / SiHx33N60EF EF Series Power MOSFETs are now stocked by
Mouser. The 600V fast body diode N-Channel power MOSFETs were developed for
ZVS / soft switching PWM topologies such as phase shifted bridges and LLC
converter half bridges.
The SiHx28N60EF / SiHx33N60EF EF Series Power MOSFETs increase reliability
in these applications by delivering a 10x lower Qrr than standard MOSFETs.
This allows the devices to regain the ability to block the full breakdown
voltage quicker, helping to avoid failure from shoot-through and thermal
overstress.
In addition, the reduced Qrr results in lower reverse recovery losses
compared to standard MOSFETs. The devices' ultra-low on-resistance and gate
charge translate into extremely low conduction and switching losses to save
energy in high-power, high-performance switch mode applications. Based on E
Series superjunction technology, the series is Avalanche energy rated (UIS)
and available in TO-220, TO-263, TO-220F, and TO-247AC packages.
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