Enhancement-mode MOSFET designed to minimize the on-state resistance

08-04-2015 | Mouser Electronics | Power

Diodes Incorporated DMN3008 30V N-Channel Enhancement Mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance. Offered in the small form factor, thermally-efficient POWERDI3333-8 case, the DMN3008 supports higher-density end products. Qualified to AEC-Q101 Standards for high reliability, the device is ideal for high-efficiency power management applications such as backlighting, power management functions, and DC-DC converters, says the company.
ads_logo.png

By Electropages

Electropages is a trusted source of news and insights from the global electronics industry. With a dedicated team of experts and editors, Electropages delivers in-depth articles, product updates, and market trends across sectors such as embedded systems, IoT, connectors, and power solutions. Our mission is to empower engineers and professionals with the knowledge they need to innovate and succeed in a rapidly evolving technological landscape.