New high-voltage 500V MOSFETs built on Gen II Super Junction technology
23-01-2015 |
Vishay
|
Power
Vishay has added eleven new devices to its 500 V series of high-voltage MOSFETs optimized for operation in switch mode power supplies (SMPS) to 500 W.
Featuring the same benefits of extremely low conduction and switching losses as the company's established E Series 600V and 650V devices, the new MOSFETs were developed to assist users in achieving higher performance / efficiency standards such as the stringent 80 PLUS efficiency standards required for certain high-performance consumer products, lighting applications, and ATX / silver box PC SMPS.
Built on second-generation Super Junction Technology, the 500V MOSFETs provide a high-efficiency complement to Vishay's existing 500V D Series components based on standard planar technology. The 12A to 20A devices feature low on-resistance from 190mohm to 380mohm and ultra-low gate charge of 22nC to 45nC. This combination results in a very favourable figure of merit (FOM) for power conversion applications.
The devices' low on-resistance also helps improve power density, while their faster switching speeds increase efficiency in typical hard-switched topologies such as power factor correction (PFC), two-switch forward converters, and fly-back converters.
The RoHS-compliant devices are designed to withstand high energy pulse in the avalanche and commutation modes with 'guaranteed' limits through 100% UIS testing, says the company.
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